Effects of electrode spacing on the response of optically controlled MESFETs
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | , |
| Format: | article |
| Published: |
2003
|
| Subjects: | |
| Online Access: | https://eprints.kfupm.edu.sa/id/eprint/14562/1/14562_1.pdf https://eprints.kfupm.edu.sa/id/eprint/14562/2/14562_2.doc |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1864513384139980800 |
|---|---|
| author | Alsunaidi, M.A. |
| author2 | Al-Absi, M.A. unknown |
| author2_role | author author |
| author_facet | Alsunaidi, M.A. Al-Absi, M.A. unknown |
| author_role | author |
| dc.creator.none.fl_str_mv | Alsunaidi, M.A. Al-Absi, M.A. unknown |
| dc.date.none.fl_str_mv | 2003-10 2020 |
| dc.format.none.fl_str_mv | application/pdf application/msword |
| dc.identifier.none.fl_str_mv | https://eprints.kfupm.edu.sa/id/eprint/14562/1/14562_1.pdf https://eprints.kfupm.edu.sa/id/eprint/14562/2/14562_2.doc (2003) Effects of electrode spacing on the response of optically controlled MESFETs. Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International conference, 1. |
| dc.language.none.fl_str_mv | en en |
| dc.publisher.none.fl_str_mv | IEEE |
| dc.relation.none.fl_str_mv | https://eprints.kfupm.edu.sa/id/eprint/14562/ |
| dc.rights.*.fl_str_mv | info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Computer |
| dc.title.none.fl_str_mv | Effects of electrode spacing on the response of optically controlled MESFETs |
| dc.type.none.fl_str_mv | Article PeerReviewed info:eu-repo/semantics/publishedVersion info:eu-repo/semantics/article |
| description | An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | KFUPM_1e82c5901be8624ff20ca0fd68901a0a |
| identifier_str_mv | (2003) Effects of electrode spacing on the response of optically controlled MESFETs. Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International conference, 1. |
| language_invalid_str_mv | en |
| network_acronym_str | KFUPM |
| network_name_str | King Fahd University of Petroleum and Minerals |
| oai_identifier_str | oai::14562 |
| publishDate | 2003 |
| publisher.none.fl_str_mv | IEEE |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| spelling | Effects of electrode spacing on the response of optically controlled MESFETsAlsunaidi, M.A.Al-Absi, M.A.unknownComputerAn accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time.IEEE2003-102020ArticlePeerReviewedinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfapplication/mswordhttps://eprints.kfupm.edu.sa/id/eprint/14562/1/14562_1.pdfhttps://eprints.kfupm.edu.sa/id/eprint/14562/2/14562_2.doc (2003) Effects of electrode spacing on the response of optically controlled MESFETs. Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. NUSOD 2003. Proceedings of the IEEE/LEOS 3rd International conference, 1. enenhttps://eprints.kfupm.edu.sa/id/eprint/14562/info:eu-repo/semantics/openAccessoai::145622019-11-01T14:06:24Z |
| spellingShingle | Effects of electrode spacing on the response of optically controlled MESFETs Alsunaidi, M.A. Computer |
| status_str | publishedVersion |
| title | Effects of electrode spacing on the response of optically controlled MESFETs |
| title_full | Effects of electrode spacing on the response of optically controlled MESFETs |
| title_fullStr | Effects of electrode spacing on the response of optically controlled MESFETs |
| title_full_unstemmed | Effects of electrode spacing on the response of optically controlled MESFETs |
| title_short | Effects of electrode spacing on the response of optically controlled MESFETs |
| title_sort | Effects of electrode spacing on the response of optically controlled MESFETs |
| topic | Computer |
| url | https://eprints.kfupm.edu.sa/id/eprint/14562/1/14562_1.pdf https://eprints.kfupm.edu.sa/id/eprint/14562/2/14562_2.doc |