"Harmonic and intermodulation performance of LDMOS transistors"

An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measu...

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Main Author: Abuelma’atti, M.T. (author)
Other Authors: unknown (author)
Format: article
Published: 2003
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Online Access:https://eprints.kfupm.edu.sa/id/eprint/946/1/harmonic_and_intermodulation_performance_abuelma_atti_isi_000188211800007.pdf
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author Abuelma’atti, M.T.
author2 unknown
author2_role author
author_facet Abuelma’atti, M.T.
unknown
author_role author
dc.creator.none.fl_str_mv Abuelma’atti, M.T.
unknown
dc.date.none.fl_str_mv 2003
2020
dc.format.none.fl_str_mv application/pdf
dc.identifier.none.fl_str_mv https://eprints.kfupm.edu.sa/id/eprint/946/1/harmonic_and_intermodulation_performance_abuelma_atti_isi_000188211800007.pdf
(2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.
dc.language.none.fl_str_mv en
dc.relation.none.fl_str_mv https://eprints.kfupm.edu.sa/id/eprint/946/
dc.rights.*.fl_str_mv info:eu-repo/semantics/openAccess
dc.subject.none.fl_str_mv Electrical
dc.title.none.fl_str_mv "Harmonic and intermodulation performance of LDMOS transistors"
dc.type.none.fl_str_mv Article
NonPeerReviewed
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
description An analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.
eu_rights_str_mv openAccess
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id KFUPM_2b8f41f2333f925df8437b86f1171784
identifier_str_mv (2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247.
language_invalid_str_mv en
network_acronym_str KFUPM
network_name_str King Fahd University of Petroleum and Minerals
oai_identifier_str oai::946
publishDate 2003
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spelling "Harmonic and intermodulation performance of LDMOS transistors"Abuelma’atti, M.T.unknownElectricalAn analysis of the intermodulation distortion(IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the DID behavior also at higher frequency.20032020ArticleNonPeerReviewedinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttps://eprints.kfupm.edu.sa/id/eprint/946/1/harmonic_and_intermodulation_performance_abuelma_atti_isi_000188211800007.pdf (2003) "Harmonic and intermodulation performance of LDMOS transistors". FREQUENZ, 57. pp. 244-247. enhttps://eprints.kfupm.edu.sa/id/eprint/946/info:eu-repo/semantics/openAccessoai::9462019-11-01T13:25:44Z
spellingShingle "Harmonic and intermodulation performance of LDMOS transistors"
Abuelma’atti, M.T.
Electrical
status_str publishedVersion
title "Harmonic and intermodulation performance of LDMOS transistors"
title_full "Harmonic and intermodulation performance of LDMOS transistors"
title_fullStr "Harmonic and intermodulation performance of LDMOS transistors"
title_full_unstemmed "Harmonic and intermodulation performance of LDMOS transistors"
title_short "Harmonic and intermodulation performance of LDMOS transistors"
title_sort "Harmonic and intermodulation performance of LDMOS transistors"
topic Electrical
url https://eprints.kfupm.edu.sa/id/eprint/946/1/harmonic_and_intermodulation_performance_abuelma_atti_isi_000188211800007.pdf