X-ray absorption near edge structure investigation of vanadium-doped ZnO thin films
Abstract X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of Vatoms, +4 oxidation state of V, 4-fold coordination of Zn in t...
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| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | , , , , |
| التنسيق: | article |
| منشور في: |
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://eprints.kfupm.edu.sa/id/eprint/523/1/FaizTabetetal.pdf |
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| الملخص: | Abstract X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of vanadium-doped ZnO thin films obtained by reactive plasma. The results show no sign of metallic clustering of Vatoms, +4 oxidation state of V, 4-fold coordination of Zn in the films, and a secondary phase (possibly VO2) formation at 15% V doping. O K edge spectra show V 3d–O 2p and Zn 4d–O 2p hybridization, and suggest that V4+ acts as electron donor that fills the σ* band. © 2006 Elsevier B.V. All rights reserved. Keywords: ZnO; XANES; Vanadium doping; Thin films; DC-sputtering |
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