A novel flash erase EEPROM memory cell with reversed poly roles
A novel structure for a flash EEPROM memory cell is described. The structure employs the first poly as a control gate, while the second poly is used as the floating gate. Such a reversed structure allows the floating gate to overlap both the source and drain even with a merged transistor memory cell...
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| Format: | article |
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1991
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| Online Access: | https://eprints.kfupm.edu.sa/id/eprint/14117/1/14117_1.pdf https://eprints.kfupm.edu.sa/id/eprint/14117/2/14117_2.doc |
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