Energy model for optically controlled MESFETs

An energy-based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional loc...

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محفوظ في:
التفاصيل البيبلوغرافية
المؤلف الرئيسي: Al-Sunaidi, M. A. (author)
مؤلفون آخرون: unknown (author)
التنسيق: article
منشور في: 2000
الموضوعات:
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author Al-Sunaidi, M. A.
author2 unknown
author2_role author
author_facet Al-Sunaidi, M. A.
unknown
author_role author
dc.creator.none.fl_str_mv Al-Sunaidi, M. A.
unknown
dc.date.none.fl_str_mv 2000-05-15
2020
dc.identifier.none.fl_str_mv (2000) Energy model for optically controlled MESFETs. Microwave and Optical Technology Letters (MOTL), 26 (1). pp. 48-52. ISSN 0895-2477
10.1002/(SICI)1098-2760(20000705)
dc.publisher.none.fl_str_mv Wiley
dc.relation.none.fl_str_mv https://eprints.kfupm.edu.sa/id/eprint/625/
10.1002/(SICI)1098-2760(20000705)
dc.rights.*.fl_str_mv info:eu-repo/semantics/openAccess
dc.subject.none.fl_str_mv Electrical
dc.title.none.fl_str_mv Energy model for optically controlled MESFETs
dc.type.none.fl_str_mv Article
PeerReviewed
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
description An energy-based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional local-field mobility models based on drift-diffusion formulations. It is shown that the drift-diffusion models lose their applicability in submicrometer gate-length devices. The presented time-domain model has a great potential in the analysis of microwave devices under ac and pulsed illumination conditions.
eu_rights_str_mv openAccess
format article
id KFUPM_b41a3211e458fb584a75eb3ac5db9b5f
identifier_str_mv (2000) Energy model for optically controlled MESFETs. Microwave and Optical Technology Letters (MOTL), 26 (1). pp. 48-52. ISSN 0895-2477
10.1002/(SICI)1098-2760(20000705)
network_acronym_str KFUPM
network_name_str King Fahd University of Petroleum and Minerals
oai_identifier_str oai::625
publishDate 2000
publisher.none.fl_str_mv Wiley
repository.mail.fl_str_mv
repository.name.fl_str_mv
repository_id_str
spelling Energy model for optically controlled MESFETsAl-Sunaidi, M. A.unknownElectricalAn energy-based transport model for the analysis of illuminated microwave active devices is presented. The model is based on the Boltzmann's transport equation, with optical carrier generation and carrier recombination accounted for. The simulation results are compared with the conventional local-field mobility models based on drift-diffusion formulations. It is shown that the drift-diffusion models lose their applicability in submicrometer gate-length devices. The presented time-domain model has a great potential in the analysis of microwave devices under ac and pulsed illumination conditions.Wiley2000-05-152020ArticlePeerReviewedinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article (2000) Energy model for optically controlled MESFETs. Microwave and Optical Technology Letters (MOTL), 26 (1). pp. 48-52. ISSN 0895-2477 10.1002/(SICI)1098-2760(20000705)https://eprints.kfupm.edu.sa/id/eprint/625/10.1002/(SICI)1098-2760(20000705)info:eu-repo/semantics/openAccessoai::6252019-11-01T13:24:42Z
spellingShingle Energy model for optically controlled MESFETs
Al-Sunaidi, M. A.
Electrical
status_str publishedVersion
title Energy model for optically controlled MESFETs
title_full Energy model for optically controlled MESFETs
title_fullStr Energy model for optically controlled MESFETs
title_full_unstemmed Energy model for optically controlled MESFETs
title_short Energy model for optically controlled MESFETs
title_sort Energy model for optically controlled MESFETs
topic Electrical