Experimental and modeling analysis of p-type Bi<sub>0</sub>.<sub>4</sub>Sb<sub>1</sub>.<sub>6</sub>Te<sub>3</sub> and graphene nanocomposites
<p dir="ltr">The state-of-the-art Bismuth-Telluride (Bi<sub>2</sub>Te<sub>3</sub>) based systems are promising thermoelectric materials for efficient thermoelectric applications. In this study, the effect of graphene nanosheets (GNS) integrity on thermoelectri...
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2022
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| Summary: | <p dir="ltr">The state-of-the-art Bismuth-Telluride (Bi<sub>2</sub>Te<sub>3</sub>) based systems are promising thermoelectric materials for efficient thermoelectric applications. In this study, the effect of graphene nanosheets (GNS) integrity on thermoelectric properties of a p-type Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> alloy has been studied using high-energy ball milling and SPS sintering techniques. The synthesized pristine Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> and 0.05wt% GNS/Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> nanocomposites at different addition times of GNS have exhibited a single-phase and artifact-free bulk nanocrystalline Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> with nanocrystals size of 17 nm. The TEM analysis confirmed the mechanical exfoliation of graphene filler in 5m nanocomposite into a single-layered nanostructure with an interplanar spacing of 0.343 nm. The prominent Raman features of the monolayered graphene sheet have appeared in the synthesized 5m-GNS/Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> nanocomposite. This highlighted the crucial rule of graphene addition time on its structure and morphology of the synthesized nanocomposites. The ZT profile of 5m nanocomposite reached 0.801 at 348 K till 398 K. This resulted in 65% of improvements to the pristine Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> pellet at 323 K. The obtained results were used to simulate a thermoelectric (TE) device module using ANSYS Workbench. The GNS nanocomposites have shown an ultrahigh output power of 95.57 W compared to 89.96 W for the pristine module at ΔT of 150 °C. The GNS addition has increased the output power of pristine Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> by 7%, leading to comparable TE performance to other simulated Bi<sub>2</sub>Te<sub>3</sub> systems.</p><h2>Other Information</h2><p dir="ltr">Published in: Journal of Materials Research and Technology<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.jmrt.2021.12.096" target="_blank">https://dx.doi.org/10.1016/j.jmrt.2021.12.096</a></p> |
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