An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications
<p dir="ltr">High-efficiency <u>power electronic converters</u> are imperative for future applications aiming to meet sustainability goals, as increased efficiency translates to reduced energy consumption. The emerging wide bandgap technology is a key enabler, offering be...
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| منشور في: |
2025
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| _version_ | 1864513523579617280 |
|---|---|
| author | Reshma Ravindran (23157058) |
| author2 | Ahmed M. Massoud (16896417) |
| author2_role | author |
| author_facet | Reshma Ravindran (23157058) Ahmed M. Massoud (16896417) |
| author_role | author |
| dc.creator.none.fl_str_mv | Reshma Ravindran (23157058) Ahmed M. Massoud (16896417) |
| dc.date.none.fl_str_mv | 2025-05-11T09:00:00Z |
| dc.identifier.none.fl_str_mv | 10.1016/j.mee.2025.112348 |
| dc.relation.none.fl_str_mv | https://figshare.com/articles/journal_contribution/An_overview_of_wide_and_ultra_wide_bandgap_semiconductors_for_next-generation_power_electronics_applications/31293022 |
| dc.rights.none.fl_str_mv | CC BY 4.0 info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Engineering Electrical engineering Electronics, sensors and digital hardware Diamond Gallium nitride (GaN) Power electronics Silicon carbide(SiC) Solid state transformer(SST) Ultra wide bandgap Wide bandgap β−Ga2O3 |
| dc.title.none.fl_str_mv | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| dc.type.none.fl_str_mv | Text Journal contribution info:eu-repo/semantics/publishedVersion text contribution to journal |
| description | <p dir="ltr">High-efficiency <u>power electronic converters</u> are imperative for future applications aiming to meet sustainability goals, as increased efficiency translates to reduced energy consumption. The emerging wide bandgap technology is a key enabler, offering better efficiency, power density, switching speed, and reduced size and weight. In view of this, we present an extensive overview of wide bandgap and ultra-wide bandgap devices for present & next-generation power electronics applications. The <u>electrical characteristics</u> of these devices are compared in this article, along with their present state and projected future developments. The current status of wide bandgap and ultra-wide bandgap devices' applicability for a wide range of emerging power electronics application areas, including solid-state transformers, data centers, ultra-fast <u>electric vehicle charging stations</u>, <u>renewable energy</u> generation, <u>energy storage systems</u>, solid-state <u>circuit breakers</u>, military <u>electronic warfare systems</u>, <u>graphics processing units, quantum computers</u>, and 6G networks, is reviewed. Furthermore, the expectations for these devices for the future of each of these applications are assessed, and the related future challenges and opportunities are discussed. The study shows that while <u>SiC</u> semiconductors will continue to dominate in high-power, high-voltage applications like transportation, grid-side converters, solid-state transformers, and renewable energy integration, <u>GaN semiconductors</u> will be crucial for low-voltage, high-frequency applications such as consumer electronics, power supplies, and data centers. Although not yet commercialized, ultra-wide bandgap devices like Diamond, and <i>β−</i><i>Ga</i><sub><em>2</em></sub><i>O</i><sub><em>3</em></sub> , with their exceptional material properties, are projected to be indispensable for high-power, high-frequency power electronics applications.</p><h2 dir="ltr">Other Information</h2><p dir="ltr">Published in: Microelectronic Engineering<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.mee.2025.112348" target="_blank">https://dx.doi.org/10.1016/j.mee.2025.112348</a></p> |
| eu_rights_str_mv | openAccess |
| id | Manara2_36fcd582159eb6b99f4fb8ed3fe14b53 |
| identifier_str_mv | 10.1016/j.mee.2025.112348 |
| network_acronym_str | Manara2 |
| network_name_str | Manara2 |
| oai_identifier_str | oai:figshare.com:article/31293022 |
| publishDate | 2025 |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| rights_invalid_str_mv | CC BY 4.0 |
| spelling | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applicationsReshma Ravindran (23157058)Ahmed M. Massoud (16896417)EngineeringElectrical engineeringElectronics, sensors and digital hardwareDiamondGallium nitride (GaN)Power electronicsSilicon carbide(SiC)Solid state transformer(SST)Ultra wide bandgapWide bandgapβ−Ga2O3<p dir="ltr">High-efficiency <u>power electronic converters</u> are imperative for future applications aiming to meet sustainability goals, as increased efficiency translates to reduced energy consumption. The emerging wide bandgap technology is a key enabler, offering better efficiency, power density, switching speed, and reduced size and weight. In view of this, we present an extensive overview of wide bandgap and ultra-wide bandgap devices for present & next-generation power electronics applications. The <u>electrical characteristics</u> of these devices are compared in this article, along with their present state and projected future developments. The current status of wide bandgap and ultra-wide bandgap devices' applicability for a wide range of emerging power electronics application areas, including solid-state transformers, data centers, ultra-fast <u>electric vehicle charging stations</u>, <u>renewable energy</u> generation, <u>energy storage systems</u>, solid-state <u>circuit breakers</u>, military <u>electronic warfare systems</u>, <u>graphics processing units, quantum computers</u>, and 6G networks, is reviewed. Furthermore, the expectations for these devices for the future of each of these applications are assessed, and the related future challenges and opportunities are discussed. The study shows that while <u>SiC</u> semiconductors will continue to dominate in high-power, high-voltage applications like transportation, grid-side converters, solid-state transformers, and renewable energy integration, <u>GaN semiconductors</u> will be crucial for low-voltage, high-frequency applications such as consumer electronics, power supplies, and data centers. Although not yet commercialized, ultra-wide bandgap devices like Diamond, and <i>β−</i><i>Ga</i><sub><em>2</em></sub><i>O</i><sub><em>3</em></sub> , with their exceptional material properties, are projected to be indispensable for high-power, high-frequency power electronics applications.</p><h2 dir="ltr">Other Information</h2><p dir="ltr">Published in: Microelectronic Engineering<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.mee.2025.112348" target="_blank">https://dx.doi.org/10.1016/j.mee.2025.112348</a></p>2025-05-11T09:00:00ZTextJournal contributioninfo:eu-repo/semantics/publishedVersiontextcontribution to journal10.1016/j.mee.2025.112348https://figshare.com/articles/journal_contribution/An_overview_of_wide_and_ultra_wide_bandgap_semiconductors_for_next-generation_power_electronics_applications/31293022CC BY 4.0info:eu-repo/semantics/openAccessoai:figshare.com:article/312930222025-05-11T09:00:00Z |
| spellingShingle | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications Reshma Ravindran (23157058) Engineering Electrical engineering Electronics, sensors and digital hardware Diamond Gallium nitride (GaN) Power electronics Silicon carbide(SiC) Solid state transformer(SST) Ultra wide bandgap Wide bandgap β−Ga2O3 |
| status_str | publishedVersion |
| title | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| title_full | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| title_fullStr | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| title_full_unstemmed | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| title_short | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| title_sort | An overview of wide and ultra wide bandgap semiconductors for next-generation power electronics applications |
| topic | Engineering Electrical engineering Electronics, sensors and digital hardware Diamond Gallium nitride (GaN) Power electronics Silicon carbide(SiC) Solid state transformer(SST) Ultra wide bandgap Wide bandgap β−Ga2O3 |