High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials
<p dir="ltr">We report the fabrication and characterization of mesoporous TiO<sub>2</sub>-based wide-bandgap bromide perovskite (FAPbBr<sub>3</sub>) solar cells employing both fluorene-dithiophene and spiro-OMeTAD as hole transport materials (HTMs). The device...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | , , |
| منشور في: |
2025
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| الموضوعات: | |
| الوسوم: |
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| _version_ | 1864513532008071168 |
|---|---|
| author | Mohammad Istiaque Hossain (17944964) |
| author2 | Puvaneswaran Chelvanathan (17944967) Qingyang Liu (1508776) Brahim Aissa (10591619) |
| author2_role | author author author |
| author_facet | Mohammad Istiaque Hossain (17944964) Puvaneswaran Chelvanathan (17944967) Qingyang Liu (1508776) Brahim Aissa (10591619) |
| author_role | author |
| dc.creator.none.fl_str_mv | Mohammad Istiaque Hossain (17944964) Puvaneswaran Chelvanathan (17944967) Qingyang Liu (1508776) Brahim Aissa (10591619) |
| dc.date.none.fl_str_mv | 2025-06-30T15:00:00Z |
| dc.identifier.none.fl_str_mv | 10.1016/j.solener.2025.113741 |
| dc.relation.none.fl_str_mv | https://figshare.com/articles/journal_contribution/High_open-circuit_voltage_in_wide-bandgap_bromide_perovskite_solar_cells_the_role_of_hole_transport_materials/30820055 |
| dc.rights.none.fl_str_mv | CC BY 4.0 info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering Thin films Fluorene-dithiophene Solution processing Perovskite solar cells Hole transport materials |
| dc.title.none.fl_str_mv | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| dc.type.none.fl_str_mv | Text Journal contribution info:eu-repo/semantics/publishedVersion text contribution to journal |
| description | <p dir="ltr">We report the fabrication and characterization of mesoporous TiO<sub>2</sub>-based wide-bandgap bromide perovskite (FAPbBr<sub>3</sub>) solar cells employing both fluorene-dithiophene and spiro-OMeTAD as hole transport materials (HTMs). The devices were fabricated using the same protocol as those investigated for spectroscopy, ensuring consistent material deposition and interface quality. Current-voltage (I-V) measurements under one sun illumination revealed promising photovoltaic performance, with power conversion efficiencies (PCE) of 6.7 % (Voc = 1.40 V, Jsc = 6.80 mA/cm<sup>2</sup>, FF = 70 %) for spiro-OMeTAD and 6.3 % (Voc = 1.39 V, Jsc = 6.60 mA/cm<sup>2</sup>, FF = 68 %) for fluorene-dithiophene-based devices. The exceptionally high open-circuit voltage (∼1.40 V) achieved by both HTMs highlights excellent interface quality and reduced non-radiative recombination losses. Both, X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were employed to investigate the chemical composition, elemental distribution, and depth profiling of the fabricated FAPbBr<sub>3</sub>-based solar cells with different hole transport materials (HTMs). XPS analysis confirmed the presence of characteristic Pb 4f, Br 3d, and N 1s peaks, verifying the composition of the perovskite layer. The SIMS results revealed a uniform distribution of bromide (Br<sup>−</sup>) within the perovskite layer, confirming the stability of the material and the absence of significant halide migration. Depth profiling further demonstrated well-defined interfaces between the perovskite, mesoporous TiO<sub>2</sub>, and the respective HTMs, with minimal interdiffusion, which aligns with the high open-circuit voltage (∼1.40 V) observed in the I-V measurements. We have also studied the charge extraction behavior and recombination dynamics using steady-state and transient optoelectronic characterization tools. FDT-based devices confirm better charge injections and better Voc compared to Spiro-OMeTAD devices. These results underscore the potential of bromide-based perovskites for high-voltage photovoltaic applications and emphasize the critical role of HTM selection in optimizing device performance.</p><h2>Other Information</h2><p dir="ltr">Published in: Solar Energy<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.solener.2025.113741" target="_blank">https://dx.doi.org/10.1016/j.solener.2025.113741</a></p> |
| eu_rights_str_mv | openAccess |
| id | Manara2_82a27e0b6b8c5a182f14a1f451e3f76c |
| identifier_str_mv | 10.1016/j.solener.2025.113741 |
| network_acronym_str | Manara2 |
| network_name_str | Manara2 |
| oai_identifier_str | oai:figshare.com:article/30820055 |
| publishDate | 2025 |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| rights_invalid_str_mv | CC BY 4.0 |
| spelling | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materialsMohammad Istiaque Hossain (17944964)Puvaneswaran Chelvanathan (17944967)Qingyang Liu (1508776)Brahim Aissa (10591619)EngineeringElectrical engineeringElectronics, sensors and digital hardwareMaterials engineeringThin filmsFluorene-dithiopheneSolution processingPerovskite solar cellsHole transport materials<p dir="ltr">We report the fabrication and characterization of mesoporous TiO<sub>2</sub>-based wide-bandgap bromide perovskite (FAPbBr<sub>3</sub>) solar cells employing both fluorene-dithiophene and spiro-OMeTAD as hole transport materials (HTMs). The devices were fabricated using the same protocol as those investigated for spectroscopy, ensuring consistent material deposition and interface quality. Current-voltage (I-V) measurements under one sun illumination revealed promising photovoltaic performance, with power conversion efficiencies (PCE) of 6.7 % (Voc = 1.40 V, Jsc = 6.80 mA/cm<sup>2</sup>, FF = 70 %) for spiro-OMeTAD and 6.3 % (Voc = 1.39 V, Jsc = 6.60 mA/cm<sup>2</sup>, FF = 68 %) for fluorene-dithiophene-based devices. The exceptionally high open-circuit voltage (∼1.40 V) achieved by both HTMs highlights excellent interface quality and reduced non-radiative recombination losses. Both, X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS) were employed to investigate the chemical composition, elemental distribution, and depth profiling of the fabricated FAPbBr<sub>3</sub>-based solar cells with different hole transport materials (HTMs). XPS analysis confirmed the presence of characteristic Pb 4f, Br 3d, and N 1s peaks, verifying the composition of the perovskite layer. The SIMS results revealed a uniform distribution of bromide (Br<sup>−</sup>) within the perovskite layer, confirming the stability of the material and the absence of significant halide migration. Depth profiling further demonstrated well-defined interfaces between the perovskite, mesoporous TiO<sub>2</sub>, and the respective HTMs, with minimal interdiffusion, which aligns with the high open-circuit voltage (∼1.40 V) observed in the I-V measurements. We have also studied the charge extraction behavior and recombination dynamics using steady-state and transient optoelectronic characterization tools. FDT-based devices confirm better charge injections and better Voc compared to Spiro-OMeTAD devices. These results underscore the potential of bromide-based perovskites for high-voltage photovoltaic applications and emphasize the critical role of HTM selection in optimizing device performance.</p><h2>Other Information</h2><p dir="ltr">Published in: Solar Energy<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.solener.2025.113741" target="_blank">https://dx.doi.org/10.1016/j.solener.2025.113741</a></p>2025-06-30T15:00:00ZTextJournal contributioninfo:eu-repo/semantics/publishedVersiontextcontribution to journal10.1016/j.solener.2025.113741https://figshare.com/articles/journal_contribution/High_open-circuit_voltage_in_wide-bandgap_bromide_perovskite_solar_cells_the_role_of_hole_transport_materials/30820055CC BY 4.0info:eu-repo/semantics/openAccessoai:figshare.com:article/308200552025-06-30T15:00:00Z |
| spellingShingle | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials Mohammad Istiaque Hossain (17944964) Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering Thin films Fluorene-dithiophene Solution processing Perovskite solar cells Hole transport materials |
| status_str | publishedVersion |
| title | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| title_full | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| title_fullStr | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| title_full_unstemmed | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| title_short | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| title_sort | High open-circuit voltage in wide-bandgap bromide perovskite solar cells: the role of hole transport materials |
| topic | Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering Thin films Fluorene-dithiophene Solution processing Perovskite solar cells Hole transport materials |