CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D
<p dir="ltr">Intermediate band solar cells (IBSC) have drawn significant attention recently due to their potential to surpass the Shockley-Queisser efficiency limit. Herein, we investigate the suitability of a CdS film as the <i>p</i>+/IB/<i>n</i>+ layers with...
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2025
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| _version_ | 1864513532721102848 |
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| author | Megat Mohd Izhar Sapeli (18696457) |
| author2 | Kazi Sajedur Rahman (18696454) Yoganash Putthisigamany (18696451) Nurkhaizan Zulkepli (22631363) Mohd Zaki Mohd Yusoff (22631366) Mohammad Istiaque Hossain (17944964) Brahim Aissa (10591619) Puvaneswaran Chelvanathan (17944967) |
| author2_role | author author author author author author author |
| author_facet | Megat Mohd Izhar Sapeli (18696457) Kazi Sajedur Rahman (18696454) Yoganash Putthisigamany (18696451) Nurkhaizan Zulkepli (22631363) Mohd Zaki Mohd Yusoff (22631366) Mohammad Istiaque Hossain (17944964) Brahim Aissa (10591619) Puvaneswaran Chelvanathan (17944967) |
| author_role | author |
| dc.creator.none.fl_str_mv | Megat Mohd Izhar Sapeli (18696457) Kazi Sajedur Rahman (18696454) Yoganash Putthisigamany (18696451) Nurkhaizan Zulkepli (22631363) Mohd Zaki Mohd Yusoff (22631366) Mohammad Istiaque Hossain (17944964) Brahim Aissa (10591619) Puvaneswaran Chelvanathan (17944967) |
| dc.date.none.fl_str_mv | 2025-11-10T18:00:00Z |
| dc.identifier.none.fl_str_mv | 10.1016/j.physleta.2025.131143 |
| dc.relation.none.fl_str_mv | https://figshare.com/articles/journal_contribution/CdS-based_intermediate_band_solar_cells_IBSC_A_numerical_investigation_using_SCAPS-1D/30636320 |
| dc.rights.none.fl_str_mv | CC BY 4.0 info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering CdS thin film SRH recombination Intermediate band solar cell |
| dc.title.none.fl_str_mv | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| dc.type.none.fl_str_mv | Text Journal contribution info:eu-repo/semantics/publishedVersion text contribution to journal |
| description | <p dir="ltr">Intermediate band solar cells (IBSC) have drawn significant attention recently due to their potential to surpass the Shockley-Queisser efficiency limit. Herein, we investigate the suitability of a CdS film as the <i>p</i>+/IB/<i>n</i>+ layers within the IBSC structure using numerical solutions. Initial benchmarking with the theoretically reported device in the literature is performed by incorporating optimal, non-overlapping sub-bandgap absorption using a custom ASCII file. It is observed that the simulated device can effectively harness energy from low-energy red light to high-energy violet light by employing three optical transitions. The results confirm that a thickness of 1 µm and a donor concentration of 10<sup>14</sup> cm<sup>-3</sup> are optimal for the absorber to reach the upper limit efficiency of 46%, with both the <i>p</i>+ and <i>n</i>+ layers being 0.1 µm thick with an acceptor/donor density of 10<sup>18</sup> cm<sup>-3</sup>, respectively. The field near the junction is shown to amplify, and the depletion width is widest at 0.97 µm, approximating the thickness of the absorber at this donor level. Additionally, inadequate impurity-host atom substitution could lead to the formation of discrete levels, which are detrimental at high defect concentrations. A defect concentration of 10<sup>18</sup> cm<sup>-3</sup> counteracts the contribution from generation, thus detrimentally depreciating the overall efficiency.</p><h2>Other Information</h2><p dir="ltr">Published in: Physics Letters A<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.physleta.2025.131143" target="_blank">https://dx.doi.org/10.1016/j.physleta.2025.131143</a></p> |
| eu_rights_str_mv | openAccess |
| id | Manara2_a740de818f6b0ff1c8b6fa394e0daa52 |
| identifier_str_mv | 10.1016/j.physleta.2025.131143 |
| network_acronym_str | Manara2 |
| network_name_str | Manara2 |
| oai_identifier_str | oai:figshare.com:article/30636320 |
| publishDate | 2025 |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| rights_invalid_str_mv | CC BY 4.0 |
| spelling | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1DMegat Mohd Izhar Sapeli (18696457)Kazi Sajedur Rahman (18696454)Yoganash Putthisigamany (18696451)Nurkhaizan Zulkepli (22631363)Mohd Zaki Mohd Yusoff (22631366)Mohammad Istiaque Hossain (17944964)Brahim Aissa (10591619)Puvaneswaran Chelvanathan (17944967)EngineeringElectrical engineeringElectronics, sensors and digital hardwareMaterials engineeringCdS thin filmSRH recombinationIntermediate band solar cell<p dir="ltr">Intermediate band solar cells (IBSC) have drawn significant attention recently due to their potential to surpass the Shockley-Queisser efficiency limit. Herein, we investigate the suitability of a CdS film as the <i>p</i>+/IB/<i>n</i>+ layers within the IBSC structure using numerical solutions. Initial benchmarking with the theoretically reported device in the literature is performed by incorporating optimal, non-overlapping sub-bandgap absorption using a custom ASCII file. It is observed that the simulated device can effectively harness energy from low-energy red light to high-energy violet light by employing three optical transitions. The results confirm that a thickness of 1 µm and a donor concentration of 10<sup>14</sup> cm<sup>-3</sup> are optimal for the absorber to reach the upper limit efficiency of 46%, with both the <i>p</i>+ and <i>n</i>+ layers being 0.1 µm thick with an acceptor/donor density of 10<sup>18</sup> cm<sup>-3</sup>, respectively. The field near the junction is shown to amplify, and the depletion width is widest at 0.97 µm, approximating the thickness of the absorber at this donor level. Additionally, inadequate impurity-host atom substitution could lead to the formation of discrete levels, which are detrimental at high defect concentrations. A defect concentration of 10<sup>18</sup> cm<sup>-3</sup> counteracts the contribution from generation, thus detrimentally depreciating the overall efficiency.</p><h2>Other Information</h2><p dir="ltr">Published in: Physics Letters A<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.physleta.2025.131143" target="_blank">https://dx.doi.org/10.1016/j.physleta.2025.131143</a></p>2025-11-10T18:00:00ZTextJournal contributioninfo:eu-repo/semantics/publishedVersiontextcontribution to journal10.1016/j.physleta.2025.131143https://figshare.com/articles/journal_contribution/CdS-based_intermediate_band_solar_cells_IBSC_A_numerical_investigation_using_SCAPS-1D/30636320CC BY 4.0info:eu-repo/semantics/openAccessoai:figshare.com:article/306363202025-11-10T18:00:00Z |
| spellingShingle | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D Megat Mohd Izhar Sapeli (18696457) Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering CdS thin film SRH recombination Intermediate band solar cell |
| status_str | publishedVersion |
| title | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| title_full | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| title_fullStr | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| title_full_unstemmed | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| title_short | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| title_sort | CdS-based intermediate band solar cells (IBSC): A numerical investigation using SCAPS-1D |
| topic | Engineering Electrical engineering Electronics, sensors and digital hardware Materials engineering CdS thin film SRH recombination Intermediate band solar cell |