Supplementary Material

The technical details of the Monte Carlo simulations presented in the main text are discussed in this supplementary material.

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Bibliographic Details
Main Author:	Joseph Dill (20461433) (author)
Other Authors:	Jonah Shoemaker (21664655) (author), Kazuki Nomoto (17549871) (author), Jimy Encomendero (18966181) (author), Zexuan Zhang (16516014) (author), Chuan Chang (20461436) (author), Jie-Cheng Chen (21664658) (author), Feliciano Giustino (1436251) (author), Stephen Goodnick (21664661) (author), Debdeep Jena (1661221) (author), Huili Xing (17556714) (author)
Published:	2025
Subjects:	Engineering GaN pFET Polarization doping High field transport Velocity-field GaN CMOS
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