Extended Behavioral Modeling of FET and Lattice-Mismatched HEMT Devices

A Master of Science thesis in Electrical Engineering by Yahya Bader Khawam entitled, "Extended Behavioral Modeling of FET and Lattice-Mismatched HEMT Devices", submitted in January 2016. Thesis advisor is Dr. Lutfi Albasha. Soft and hard copy available.

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Khawam, Yahya Bader (author)
التنسيق:	doctoralThesis
منشور في:	2016
الموضوعات:	High Electron Mobility Transistor Field Effect Transistors Behavioral Modeling Optimization Genetic Algorithm Non Dominated Sorting Genetic Algorithms multi-variable Newton's Method Kink Effect Soft Breakdown Intrinsic Elements Extrinsic Elements Parasitic Extraction DC Model S-Parameters Local Minimum Search Global Optimization Field-effect transistors Modulation-doped field-effect transistors
الوصول للمادة أونلاين:	http://hdl.handle.net/11073/8305
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

الوصف
الملخص:	A Master of Science thesis in Electrical Engineering by Yahya Bader Khawam entitled, "Extended Behavioral Modeling of FET and Lattice-Mismatched HEMT Devices", submitted in January 2016. Thesis advisor is Dr. Lutfi Albasha. Soft and hard copy available.

Extended Behavioral Modeling of FET and Lattice-Mismatched HEMT Devices

مواد مشابهة