Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films

Developing thermoelectric films without substrates—free-standing films—eliminates substrate-induced effects on performance and meets the flexibility requirements of emerging wearable thermoelectric applications. This study investigates Gallium-doped Zinc Oxide (GZO), composed of abundant and non-tox...

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Main Author: Aicha S., Lemine (author)
Other Authors: Bhadra, Jolly (author), Popelka, Anton (author), Maurya, Muni Raj (author), Sadasivuni, Kishor Kumar (author), Shakoor, Rana Abdul (author), Zubair, Ahmad (author), Al-Thani, Noora J. (author), Hasan, Anwarul (author)
Format: article
Published: 2024
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Online Access:http://dx.doi.org/10.1016/j.heliyon.2024.e39836
https://www.sciencedirect.com/science/article/pii/S2405844024158677
http://hdl.handle.net/10576/60939
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_version_ 1857415087490334720
author Aicha S., Lemine
author2 Bhadra, Jolly
Popelka, Anton
Maurya, Muni Raj
Sadasivuni, Kishor Kumar
Shakoor, Rana Abdul
Zubair, Ahmad
Al-Thani, Noora J.
Hasan, Anwarul
author2_role author
author
author
author
author
author
author
author
author_facet Aicha S., Lemine
Bhadra, Jolly
Popelka, Anton
Maurya, Muni Raj
Sadasivuni, Kishor Kumar
Shakoor, Rana Abdul
Zubair, Ahmad
Al-Thani, Noora J.
Hasan, Anwarul
author_role author
dc.creator.none.fl_str_mv Aicha S., Lemine
Bhadra, Jolly
Popelka, Anton
Maurya, Muni Raj
Sadasivuni, Kishor Kumar
Shakoor, Rana Abdul
Zubair, Ahmad
Al-Thani, Noora J.
Hasan, Anwarul
dc.date.none.fl_str_mv 2024-11-10T05:36:02Z
2024-11-15
dc.format.none.fl_str_mv application/pdf
dc.identifier.none.fl_str_mv http://dx.doi.org/10.1016/j.heliyon.2024.e39836
Experimental Analysis of Free-standing and Substrate-constrained Ga-doped ZnO Nanostructured Thermoelectric Films, HELIYON, https://doi.org/10.1016/j.heliyon.2024.e39836.
24058440
https://www.sciencedirect.com/science/article/pii/S2405844024158677
http://hdl.handle.net/10576/60939
21
10
dc.language.none.fl_str_mv en
dc.publisher.none.fl_str_mv Elsevier
dc.rights.none.fl_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
dc.subject.none.fl_str_mv Thermoelectric
Nanostructured
Ga-ZnO
Film
Free-standing
Substrate-constrained
dc.title.none.fl_str_mv Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
dc.type.none.fl_str_mv Article
info:eu-repo/semantics/publishedVersion
info:eu-repo/semantics/article
description Developing thermoelectric films without substrates—free-standing films—eliminates substrate-induced effects on performance and meets the flexibility requirements of emerging wearable thermoelectric applications. This study investigates Gallium-doped Zinc Oxide (GZO), composed of abundant and non-toxic elements, to fabricate a substrate-free GZO film via 3D printing and compares its structural, chemical, and thermoelectric properties with those of a substrate-constrained GZO film produced through chemical deposition. Both films exhibited uniform crystal structures and phase purity; however, the substrate-constrained film displayed additional diffraction peaks, suggesting potential substrate interactions. The 3D-printed free-standing film effectively eliminated the tensile stresses observed in the substrate-constrained film. FE-STEM analysis revealed nanostructures with homogeneous elemental distribution in both films, though the substrate-constrained film showed discontinuities, such as pores, likely caused by post-deposition annealing treatment. XPS analysis highlighted differences in chemical states and elemental compositions between the films, influenced by fabrication methods, substrate-induced stresses, and surface energy mismatches. The free-standing GZO film developed through 3D printing exhibited a more balanced incorporation of Zn and O, as it was not subject to substrate or post-deposition annealing constraints. Consequently, it demonstrated a 14 % increase in electrical conductivity and a 91 % improvement in the Seebeck coefficient compared to the substrate-constrained film, resulting in a higher room-temperature power factor of 261 nW/m·K2. These findings underscore the potential of 3D-printed free-standing GZO films to advance thermoelectric applications, offering a promising alternative to overcome the challenges of substrate-constrained films and further drive innovation in the field.
eu_rights_str_mv openAccess
format article
id qu_29bf5bafcf2a0ab24339c75998b5633f
identifier_str_mv Experimental Analysis of Free-standing and Substrate-constrained Ga-doped ZnO Nanostructured Thermoelectric Films, HELIYON, https://doi.org/10.1016/j.heliyon.2024.e39836.
24058440
21
10
language_invalid_str_mv en
network_acronym_str qu
network_name_str Qatar University repository
oai_identifier_str oai:qspace.qu.edu.qa:10576/60939
publishDate 2024
publisher.none.fl_str_mv Elsevier
repository.mail.fl_str_mv
repository.name.fl_str_mv
repository_id_str
rights_invalid_str_mv http://creativecommons.org/licenses/by-nc-nd/4.0/
spelling Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric filmsAicha S., LemineBhadra, JollyPopelka, AntonMaurya, Muni RajSadasivuni, Kishor KumarShakoor, Rana AbdulZubair, AhmadAl-Thani, Noora J.Hasan, AnwarulThermoelectricNanostructuredGa-ZnOFilmFree-standingSubstrate-constrainedDeveloping thermoelectric films without substrates—free-standing films—eliminates substrate-induced effects on performance and meets the flexibility requirements of emerging wearable thermoelectric applications. This study investigates Gallium-doped Zinc Oxide (GZO), composed of abundant and non-toxic elements, to fabricate a substrate-free GZO film via 3D printing and compares its structural, chemical, and thermoelectric properties with those of a substrate-constrained GZO film produced through chemical deposition. Both films exhibited uniform crystal structures and phase purity; however, the substrate-constrained film displayed additional diffraction peaks, suggesting potential substrate interactions. The 3D-printed free-standing film effectively eliminated the tensile stresses observed in the substrate-constrained film. FE-STEM analysis revealed nanostructures with homogeneous elemental distribution in both films, though the substrate-constrained film showed discontinuities, such as pores, likely caused by post-deposition annealing treatment. XPS analysis highlighted differences in chemical states and elemental compositions between the films, influenced by fabrication methods, substrate-induced stresses, and surface energy mismatches. The free-standing GZO film developed through 3D printing exhibited a more balanced incorporation of Zn and O, as it was not subject to substrate or post-deposition annealing constraints. Consequently, it demonstrated a 14 % increase in electrical conductivity and a 91 % improvement in the Seebeck coefficient compared to the substrate-constrained film, resulting in a higher room-temperature power factor of 261 nW/m·K2. These findings underscore the potential of 3D-printed free-standing GZO films to advance thermoelectric applications, offering a promising alternative to overcome the challenges of substrate-constrained films and further drive innovation in the field.This work is supported by Qatar University Grant no. GTRA-17722. Additional support is also provided by the Qatar National Research Fund (a member of the Qatar Foundation) from Grant no. NPRP12S-310-190276. The statements made herein are solely the responsibility of the authors. The authors acknowledge the technical support from the Center of Advanced Materials (CAM), and the Gas Processing Center (GPC) at Qatar University, and the Core Labs at Hamad Bin Khalifa University (HBKU). Open access funding is provided by the Qatar National Library (QNL).Elsevier2024-11-10T05:36:02Z2024-11-15Articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1016/j.heliyon.2024.e39836Experimental Analysis of Free-standing and Substrate-constrained Ga-doped ZnO Nanostructured Thermoelectric Films, HELIYON, https://doi.org/10.1016/j.heliyon.2024.e39836.24058440https://www.sciencedirect.com/science/article/pii/S2405844024158677http://hdl.handle.net/10576/609392110enhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:qspace.qu.edu.qa:10576/609392024-11-10T19:07:08Z
spellingShingle Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
Aicha S., Lemine
Thermoelectric
Nanostructured
Ga-ZnO
Film
Free-standing
Substrate-constrained
status_str publishedVersion
title Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
title_full Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
title_fullStr Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
title_full_unstemmed Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
title_short Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
title_sort Experimental analysis of free-standing and substrate-constrained Ga-doped ZnO nanostructured thermoelectric films
topic Thermoelectric
Nanostructured
Ga-ZnO
Film
Free-standing
Substrate-constrained
url http://dx.doi.org/10.1016/j.heliyon.2024.e39836
https://www.sciencedirect.com/science/article/pii/S2405844024158677
http://hdl.handle.net/10576/60939