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Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene
Argitaratua 2025“...The alternating stacking of 30°-rotated layers in thicker graphene leads to electronically noninteracting layers. Moreover, in angle-resolved photoemission, replica bands due to Umklapp processes emerge without the opening of an energy gap....”
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Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene
Argitaratua 2025“...The alternating stacking of 30°-rotated layers in thicker graphene leads to electronically noninteracting layers. Moreover, in angle-resolved photoemission, replica bands due to Umklapp processes emerge without the opening of an energy gap....”