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    Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene Tim Kratky (7296743)

    Хэвлэсэн 2025
    “…The alternating stacking of 30°-rotated layers in thicker graphene leads to electronically noninteracting layers. Moreover, in angle-resolved photoemission, replica bands due to Umklapp processes emerge without the opening of an energy gap.…”
  20. 20

    Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene Tim Kratky (7296743)

    Хэвлэсэн 2025
    “…The alternating stacking of 30°-rotated layers in thicker graphene leads to electronically noninteracting layers. Moreover, in angle-resolved photoemission, replica bands due to Umklapp processes emerge without the opening of an energy gap.…”