Analysis of dopant diffusion in molten germanium induced by pulsed nd : yag laser حسب Mousa, Ali M. [علي مطشر موسى]

"…Doped sample Tann = 200- 500 C for time t mn = 45 subjected to subsequent thermal annealing (at the temperature and to plused leacr annealing (en<5rgy density in a min) pluse E=5.2 - 9.5 J/cm2) in order to establish optimal condition. …"
احصل على النص الكامل