Showing 201 - 220 results of 20,705 for search '(( 50 ((((mg decrease) OR (mean decrease))) OR (a decrease)) ) OR ( 5 mg decrease ))', query time: 0.78s Refine Results
  1. 201

    mTORC1 hyperactivation led to a decreased autophagic activity in the podocytes. by Wakiko Iwata (8600457)

    Published 2020
    “…(<b>B</b>) <i>FIP200</i> and <i>ATG101</i> mRNA expressions were decreased in the primary cultured podocytes from <i>Tsc2</i><sup>Δ<i>podocyte</i></sup>. …”
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    <i>Bbs1</i><sup><i>M390R/M390R</i></sup> mice have decreased hippocampal proliferation. by Thomas K. Pak (10686881)

    Published 2021
    “…At P30, mice were started on BrdU injections (2x50mg/kg) for five days. At P44, mice were taken down. …”
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    The decrease or inhibition of Hsp90 induced REST degradation. by Raúl Orozco-Díaz (7067624)

    Published 2019
    “…(D) The level of REST dramatically reduced in differentiated SH-SY5Y cells treated with GA (1 μM) or PU-H71 (50 nM) at 24 h. (E) The REST level decreased by GA more than 50% and (F) PU-H71 more than 80%, respectively. …”
  11. 211

    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
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    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
  16. 216

    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
  17. 217

    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
  18. 218

    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
  19. 219

    Investigation of <i>In Vacuo</i> Atomic Layer Deposition of Ultrathin MgAl<sub>2</sub>O<sub>4</sub> Using Scanning Tunneling Spectroscopy by Ryan Goul (4352566)

    Published 2020
    “…Additionally, growth on a Fe layer showed a moderate CBM of 1.25 eV. Nevertheless, the observed CBM in the ultrathin ALD MgAl<sub>2</sub>O<sub>4</sub> greatly exceeds that of thermally oxidized AlO<i><sub>x</sub></i> barriers (∼0.6 eV) and is similar to that of high-quality ALD-grown Al<sub>2</sub>O<sub>3</sub> (∼1.7 eV) and MgO grown with an Al<sub>2</sub>O<sub>3</sub> seed layer (∼1.50 eV) of comparable total thickness in the ultrathin range. …”
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