Search alternatives:
linear decrease » linear increase (Expand Search)
laser decrease » larger decrease (Expand Search), water decreases (Expand Search), teer decrease (Expand Search)
large decrease » marked decrease (Expand Search), large increases (Expand Search), large degree (Expand Search)
mean decrease » a decrease (Expand Search)
a large » _ large (Expand Search)
linear decrease » linear increase (Expand Search)
laser decrease » larger decrease (Expand Search), water decreases (Expand Search), teer decrease (Expand Search)
large decrease » marked decrease (Expand Search), large increases (Expand Search), large degree (Expand Search)
mean decrease » a decrease (Expand Search)
a large » _ large (Expand Search)
-
9781
Stimulation of autophagy with lithium reduces A1AT-Z levels independent of FBG1.
Published 2015“…FBG1 does not further decrease A1AT-Z in the presence of lithium. B) ImageJ analysis showing mean values (n = 9) normalized to total protein.…”
-
9782
-
9783
-
9784
S14 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9785
S11 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9786
S16 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9787
S1 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9788
S8 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9789
S6 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9790
S13 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9791
S4 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9792
S10 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9793
S3 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9794
S12 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9795
S2 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9796
S15 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9797
S9 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9798
S7 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9799
S5 File -
Published 2023“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
-
9800