Showing 9,781 - 9,800 results of 61,004 for search '(( a ((((laser decrease) OR (mean decrease))) OR (linear decrease)) ) OR ( a large decrease ))', query time: 1.14s Refine Results
  1. 9781

    Stimulation of autophagy with lithium reduces A1AT-Z levels independent of FBG1. by John H. Wen (785980)

    Published 2015
    “…FBG1 does not further decrease A1AT-Z in the presence of lithium. B) ImageJ analysis showing mean values (n = 9) normalized to total protein.…”
  2. 9782
  3. 9783
  4. 9784

    S14 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  5. 9785

    S11 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  6. 9786

    S16 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  7. 9787

    S1 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  8. 9788

    S8 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  9. 9789

    S6 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  10. 9790

    S13 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  11. 9791

    S4 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  12. 9792

    S10 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  13. 9793

    S3 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  14. 9794

    S12 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  15. 9795

    S2 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  16. 9796

    S15 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  17. 9797

    S9 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  18. 9798

    S7 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  19. 9799

    S5 File - by Xiaoshi Jin (15675049)

    Published 2023
    “…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”
  20. 9800