S11 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S16 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S1 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S8 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S6 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S13 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S4 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S10 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S3 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S12 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S2 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S15 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S9 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S7 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

S5 File - by Xiaoshi Jin (15675049)

“…In addition, the charge stored in the floating gate has an effect of reducing the energy band bending near the source/drain regions when the gate is reversely biased, thereafter, the band to band tunneling (BTBT) leakage current can be largely decreased. The scale of the proposed NBRFET can be reduced to nanometer level. …”

Mean estimated glomerular filtration rates during triple therapy. by Audrey Coilly (798304)

Dose-Finding Study of Omeprazole on Gastric pH in Neonates with Gastro-Esophageal Acid Reflux Using a Bayesian Sequential Approach by Florentia Kaguelidou (373190)

“…</p><p>Patients</p><p>Neonates with a postmenstrual age ≥ 35 weeks and a pathologic 24-hour intra-esophageal pH monitoring defined by a reflux index ≥ 5% over 24 hours were considered for participation. …”

Fig 8 - by Xiaoshi Jin (15675049)

Self-Powered TENG with High Humidity Sensitivity from PVA Film Modified by LiCl and MXene by Jing Wang (6206297)

Subjects:

Self-Powered TENG with High Humidity Sensitivity from PVA Film Modified by LiCl and MXene by Jing Wang (6206297)

Subjects: