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    Thermal Transport at the AlN–SiC Interface and Grain Boundary of AlN by Taesoon Hwang (3300897)

    Published 2024
    “…In addition, V<sub>Al</sub> defects are increased by excess O<sub>N</sub>, resulting in a continuous increase in TR, and then, the calculated thermal boundary resistance (TBR) of the AlN–SiC interface with increased density of V<sub>Al</sub> by excess O<sub>N</sub> reaches the experimental TBR. …”
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