Showing 7,861 - 7,880 results of 129,164 for search '(( i e decrease ) OR ( 5 ((((point decrease) OR (fold decrease))) OR (a decrease)) ))', query time: 2.03s Refine Results
  1. 7861
  2. 7862

    Anti-iNOS immunofluorescence intensity in microglial cells of quail embryo retinas from 8 days of incubation to adulthood. by Ana Sierra (623502)

    Published 2014
    “…<p>The histogram represents anti-iNOS fluorescence intensities per microglial cell obtained in the nerve fiber layer (NFL), inner plexiform layer (IPL) and outer plexiform layer (OPL) on confocal micrographs of double QH1/anti-iNOS immunolabeled whole-mounted retinas of quail embryos at 8 days of incubation (E8), E9, E14, and of 4-day-old (P4) and adult quails. …”
  3. 7863
  4. 7864
  5. 7865
  6. 7866

    Loss of the <i>Caenorhabditis elegans</i> pocket protein LIN-35 reveals MuvB's innate function as the repressor of DREAM target genes by Paul D. Goetsch (4559587)

    Published 2017
    “…Depletion of MuvB, but not E2F-DP, in the sensitized <i>lin-35</i> null background caused further upregulation of DREAM target genes. …”
  7. 7867
  8. 7868

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  9. 7869

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  10. 7870

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  11. 7871

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  12. 7872

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  13. 7873

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  14. 7874

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  15. 7875

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  16. 7876

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  17. 7877

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  18. 7878

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  19. 7879

    Structure–Band Gap Relationships in Hexagonal Polytypes and Low-Dimensional Structures of Hybrid Tin Iodide Perovskites by Constantinos C. Stoumpos (1364667)

    Published 2016
    “…All compounds have been identified as medium-to-wide-band-gap semiconductors in the range of <i>E</i><sub>g</sub> = 1.90–2.40 eV, with the band gap progressively decreasing with increased corner-sharing functionality and increased torsion angle in the octahedral connectivity.…”
  20. 7880

    Induction of the M2 macrophage protein Arg1 in xenotransplanted mouse mammary tumors. by Karen M. Henkels (3350273)

    Published 2016
    “…<b>(H-I)</b> Presence of Arg1 in necrotic areas in xenotransplanted primary tumors. …”