يعرض 121 - 140 نتائج من 2,340 نتيجة بحث عن '(( significant barrier layer ) OR ( significant ((degs decrease) OR (teer decrease)) ))', وقت الاستعلام: 0.27s تنقيح النتائج
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    Effect of Al<sub>2</sub>O<sub>3</sub> Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using <i>In Situ</i> Atomic Layer Deposition حسب Jagaran Acharya (1699264)

    منشور في 2019
    "…Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range of 2.20–4.40 nm were fabricated using <i>in vacuo</i> sputtering and atomic layer deposition (ALD). In order to achieve a high-quality metal/insulator (M/I) interface and hence high-quality dielectric ALD-MgO films, a 5 cycles (∼0.55 nm) thick ALD-Al<sub>2</sub>O<sub>3</sub> seed layer (SL) was employed to demonstrate the dielectric constant (ε<sub>r</sub>) is ∼8.82–9.38 in 3.30–4.95 nm thick ALD-MgO/SL films, which is close to that of single-crystal MgO ε<sub>r</sub> ∼ 9.80. …"
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    Effect of Al<sub>2</sub>O<sub>3</sub> Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using <i>In Situ</i> Atomic Layer Deposition حسب Jagaran Acharya (1699264)

    منشور في 2019
    "…Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range of 2.20–4.40 nm were fabricated using <i>in vacuo</i> sputtering and atomic layer deposition (ALD). In order to achieve a high-quality metal/insulator (M/I) interface and hence high-quality dielectric ALD-MgO films, a 5 cycles (∼0.55 nm) thick ALD-Al<sub>2</sub>O<sub>3</sub> seed layer (SL) was employed to demonstrate the dielectric constant (ε<sub>r</sub>) is ∼8.82–9.38 in 3.30–4.95 nm thick ALD-MgO/SL films, which is close to that of single-crystal MgO ε<sub>r</sub> ∼ 9.80. …"
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