Electromagnetic wave effects on microwave transistors using afull-wave time-domain model
A detailed full-wave time-domain simulation model for the analysis of electromagnetic effects on the behavior of the submicrometer-gate field-effect transistor (FET's) is presented. The full wave simulation model couples a three-dimensional (3-D) time-domain solution of Maxwell's equations...
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | article |
| Published: |
1996
|
| Subjects: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|