Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy
<p dir="ltr">Indium selenide is a III-VI semiconductor with promising electronic and optoelectronic properties, but its polymorphism makes single phase growth difficult, hindering its use in advanced electronic and photonic devices. In this study, we introduce a novel phase-selective...
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2025
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