Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy
<p dir="ltr">Indium selenide is a III-VI semiconductor with promising electronic and optoelectronic properties, but its polymorphism makes single phase growth difficult, hindering its use in advanced electronic and photonic devices. In this study, we introduce a novel phase-selective...
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| مؤلفون آخرون: | , , , , , |
| منشور في: |
2025
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إضافة وسم
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| _version_ | 1864513524569473024 |
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| author | Abdelmajid Salhi (9178041) |
| author2 | Anas Abutaha (6503564) Atef Zekri (14156904) Yongfeng Tong (3121338) Golibjon Berdiyorov (6325997) Sultan Alshaibani (12059804) Brahim Aissa (10591619) |
| author2_role | author author author author author author |
| author_facet | Abdelmajid Salhi (9178041) Anas Abutaha (6503564) Atef Zekri (14156904) Yongfeng Tong (3121338) Golibjon Berdiyorov (6325997) Sultan Alshaibani (12059804) Brahim Aissa (10591619) |
| author_role | author |
| dc.creator.none.fl_str_mv | Abdelmajid Salhi (9178041) Anas Abutaha (6503564) Atef Zekri (14156904) Yongfeng Tong (3121338) Golibjon Berdiyorov (6325997) Sultan Alshaibani (12059804) Brahim Aissa (10591619) |
| dc.date.none.fl_str_mv | 2025-08-20T15:00:00Z |
| dc.identifier.none.fl_str_mv | 10.1016/j.apsusc.2025.164367 |
| dc.relation.none.fl_str_mv | https://figshare.com/articles/journal_contribution/Tin-mediated_phase-controlled_growth_of_-InSe_thin_films_on_Si_100_via_molecular_beam_epitaxy/31056295 |
| dc.rights.none.fl_str_mv | CC BY 4.0 info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Engineering Materials engineering Nanotechnology Physical sciences Classical physics Indium selenide Tin mediation Molecular beam epitaxy Phase control Surface chemistry Density functional theory |
| dc.title.none.fl_str_mv | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| dc.type.none.fl_str_mv | Text Journal contribution info:eu-repo/semantics/publishedVersion text contribution to journal |
| description | <p dir="ltr">Indium selenide is a III-VI semiconductor with promising electronic and optoelectronic properties, but its polymorphism makes single phase growth difficult, hindering its use in advanced electronic and photonic devices. In this study, we introduce a novel phase-selective growth of γ-InSe using tin (Sn)-mediated Molecular Beam Epitaxy (MBE) on Si (100). By tuning Sn flux during indium and selenium co-evaporation, we demonstrate a phase transition from γ-In<sub>2</sub>Se<sub>3</sub> to γ-InSe. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) confirm the absence of Sn within the grown films, indicating that Sn irradiation facilitates the displacement of Se adatoms from the surface, effectively lowering the effective Se/In flux ratio. This reduction favors the formation of γ-InSe over γ-In<sub>2</sub>Se<sub>3</sub> as confirmed by Raman spectroscopy, mimicking the effect of reduced Se supply. Density functional theory calculations showed that SnSe clusters have lower formation energies than InSe clusters, indicating that Sn preferentially binds with Se. Furthermore, SnSe clusters exhibit weaker adsorption on the Si (100) surface compared to InSe clusters, suggesting that SnSe desorbs more readily. These findings offer new insights into surfactant-mediated phase engineering and pave the way for the scalable integration of single-phase γ-InSe on silicon for future electronic and optoelectronic applications.</p><h2 dir="ltr">Other Information</h2><p dir="ltr">Published in: Applied Surface Science<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.apsusc.2025.164367" target="_blank">https://dx.doi.org/10.1016/j.apsusc.2025.164367</a></p> |
| eu_rights_str_mv | openAccess |
| id | Manara2_89c402435f4248ce0fc2b24932002f1a |
| identifier_str_mv | 10.1016/j.apsusc.2025.164367 |
| network_acronym_str | Manara2 |
| network_name_str | Manara2 |
| oai_identifier_str | oai:figshare.com:article/31056295 |
| publishDate | 2025 |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| rights_invalid_str_mv | CC BY 4.0 |
| spelling | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxyAbdelmajid Salhi (9178041)Anas Abutaha (6503564)Atef Zekri (14156904)Yongfeng Tong (3121338)Golibjon Berdiyorov (6325997)Sultan Alshaibani (12059804)Brahim Aissa (10591619)EngineeringMaterials engineeringNanotechnologyPhysical sciencesClassical physicsIndium selenideTin mediationMolecular beam epitaxyPhase controlSurface chemistryDensity functional theory<p dir="ltr">Indium selenide is a III-VI semiconductor with promising electronic and optoelectronic properties, but its polymorphism makes single phase growth difficult, hindering its use in advanced electronic and photonic devices. In this study, we introduce a novel phase-selective growth of γ-InSe using tin (Sn)-mediated Molecular Beam Epitaxy (MBE) on Si (100). By tuning Sn flux during indium and selenium co-evaporation, we demonstrate a phase transition from γ-In<sub>2</sub>Se<sub>3</sub> to γ-InSe. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) confirm the absence of Sn within the grown films, indicating that Sn irradiation facilitates the displacement of Se adatoms from the surface, effectively lowering the effective Se/In flux ratio. This reduction favors the formation of γ-InSe over γ-In<sub>2</sub>Se<sub>3</sub> as confirmed by Raman spectroscopy, mimicking the effect of reduced Se supply. Density functional theory calculations showed that SnSe clusters have lower formation energies than InSe clusters, indicating that Sn preferentially binds with Se. Furthermore, SnSe clusters exhibit weaker adsorption on the Si (100) surface compared to InSe clusters, suggesting that SnSe desorbs more readily. These findings offer new insights into surfactant-mediated phase engineering and pave the way for the scalable integration of single-phase γ-InSe on silicon for future electronic and optoelectronic applications.</p><h2 dir="ltr">Other Information</h2><p dir="ltr">Published in: Applied Surface Science<br>License: <a href="http://creativecommons.org/licenses/by/4.0/" target="_blank">http://creativecommons.org/licenses/by/4.0/</a><br>See article on publisher's website: <a href="https://dx.doi.org/10.1016/j.apsusc.2025.164367" target="_blank">https://dx.doi.org/10.1016/j.apsusc.2025.164367</a></p>2025-08-20T15:00:00ZTextJournal contributioninfo:eu-repo/semantics/publishedVersiontextcontribution to journal10.1016/j.apsusc.2025.164367https://figshare.com/articles/journal_contribution/Tin-mediated_phase-controlled_growth_of_-InSe_thin_films_on_Si_100_via_molecular_beam_epitaxy/31056295CC BY 4.0info:eu-repo/semantics/openAccessoai:figshare.com:article/310562952025-08-20T15:00:00Z |
| spellingShingle | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy Abdelmajid Salhi (9178041) Engineering Materials engineering Nanotechnology Physical sciences Classical physics Indium selenide Tin mediation Molecular beam epitaxy Phase control Surface chemistry Density functional theory |
| status_str | publishedVersion |
| title | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| title_full | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| title_fullStr | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| title_full_unstemmed | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| title_short | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| title_sort | Tin-mediated phase-controlled growth of γ-InSe thin films on Si (100) via molecular beam epitaxy |
| topic | Engineering Materials engineering Nanotechnology Physical sciences Classical physics Indium selenide Tin mediation Molecular beam epitaxy Phase control Surface chemistry Density functional theory |