Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene

We report on a gentle procedure for the complete electronic decoupling of graphene from Cu. The procedure can be added to the growth protocol of graphene synthesis by chemical vapor deposition making use of the widely unnoticed silicon release from hot wall quartz tube reactors. So far, Si release w...

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Հիմնական հեղինակ:	Tim Kratky (7296743) (author)
Այլ հեղինակներ:	Jürgen Kraus (11140090) (author), Paul M. Leidinger (20439207) (author), Patrick Zeller (1658965) (author), Francesca Genuzio (3797128) (author), Alessandro Sala (1535278) (author), Tevfik Onur Menteş (1535290) (author), Andrea Locatelli (1535287) (author), Sebastian Günther (1515196) (author)
Հրապարակվել է:	2025
Խորագրեր:	Biochemistry Medicine Cell Biology Statistics Environmental Sciences not elsewhere classified Chemical Sciences not elsewhere classified Information Systems not elsewhere classified subsequent oxygen exposure replica bands due like band structure electronically noninteracting layers electronic band structure complete electronic decoupling combined spectroscopic photoelectron chemical vapor deposition band gap formation thicker graphene leads graphene decouples electronically standing graphene emerges loaded cu foil standing graphene energy gap polycrystalline foil foil pretreatment grown graphene covering graphene stable material resolved photoemission reactor turns reactor segregates making use growth protocol alternating stacking 4 ev 3 ev
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Making Use of Si Contaminants during Chemical Vapor Deposition of Graphene on Cu: Synthesis of a Stable Material with the Textbook-like Band Structure of Free-Standing Graphene

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