Supplementary Material

Supplementary Material

the supplementary material is for the process flow of different devices, pulses of electrical measurement for different devices, the Cg-Vg curves and QMCV fitting curves, the same EIL parameters, the ΔVth with increasing tpw and different Vp, PGM/ERS Vth evolution during cycling under the condition...

Полное описание

Сохранить в:
Библиографические подробности
Главный автор: Kaiyi Li (241539) (author)
Другие авторы: Saifei Dai (22331209) (author), Yajing Ding (22331212) (author), Xianzhou Shao (22331215) (author), Tao Hu (422014) (author), Xinpei Jia (22331218) (author), Fengbin Tian (22331221) (author), Xiaoqing Sun (752601) (author), Junshuai Chai (22331224) (author), Hao Xu (6530) (author), Kai Han (1499161) (author), Xiaolei Wang (139592) (author), Wenwu Wang (4352767) (author), Tianchun Ye (15452302) (author)
Опубликовано: 2025
Предметы:
Engineering
charge trapping
gate leakage
endurance
ferroelectric field transistors (FeFETs)
Метки: Добавить метку
Нет меток, Требуется 1-ая метка записи!

Схожие документы