Type-I band offset between diamond and n-type Al Ga oxynitride: possible diamond-based heterojunction for high-power and high-frequency electronic devices
RHEED pattern of a sample after depositing 1 monolayer of Si on the cleaned substrate at ~250 {degree sign}C is shown as Fig. S1. C 1s XPS spectrum and the result of curve-fitting for the sample #1 at an electron detection polar-angle of 60 (surface-sensitive mode) is shown as Fig. S2. Energy loss...
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2025
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