Thermal Transport at the AlN–SiC Interface and Grain Boundary of AlN

AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN–SiC interfaces and through grain boundaries of AlN has not...

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محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Taesoon Hwang (3300897) (author)
مؤلفون آخرون:	Ping-Che Lee (16610598) (author), Andrew C. Kummel (1511401) (author), Kyeongjae Cho (1330275) (author)
منشور في:	2024
الموضوعات:	Biophysics Biochemistry Medicine Cell Biology Genetics Pharmacology Ecology Developmental Biology Cancer Plant Biology Space Science thermodynamically favorable compared inversion domain boundaries n </ sub al </ sub grain boundary models aln grain boundaries grain boundaries grain boundary thermal transport thermal resistances thermal properties thermal conductor silicon carbide relevant thickness principles calculations power electronics much higher large increase elemental intermixing deposition process continuous increase clearly analyzed buffer layer balanced defect aln aln aln acts active device
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Thermal Transport at the AlN–SiC Interface and Grain Boundary of AlN

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