TCAD Simulation and Analysis of Selective Buried Oxide MOSFET Dynamic Power
Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to decreasing system effciency and lifetime. The BULK metal oxide semiconductor field-effect transistor (MOSFET) has relatively high power dissipation an...
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| Format: | article |
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2019
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| Online Access: | http://hdl.handle.net/11073/16612 |
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