Comprehensive investigation of Er2O3 thin films grown with different ALD approaches
The effect of Er precursor nature (Er(CpMe)3 or Er(tmhd)3) and annealing treatment at 500–1100 °C on the structural and optical properties of Er2O3 films grown on Si substrates by thermal or O2-plasma-assisted atomic layer deposition was studied by means of spectroscopic ellipsometry, Fourier-transf...
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| مؤلفون آخرون: | , , , , , , , , , |
| التنسيق: | article |
| منشور في: |
2022
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| الوصول للمادة أونلاين: | http://dx.doi.org/10.1016/j.surfin.2022.102377 https://www.sciencedirect.com/science/article/pii/S2468023022006381 http://hdl.handle.net/10576/52675 |
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| _version_ | 1857415083869601792 |
|---|---|
| author | L., Khomenkova |
| author2 | Merabet, H. Chauvat, M.-P. Frilay, C. Portier, X. Labbe, C. Marie, P. Cardin, J. Boudin, S. Rueff, J.-M. Gourbilleau, F. |
| author2_role | author author author author author author author author author author |
| author_facet | L., Khomenkova Merabet, H. Chauvat, M.-P. Frilay, C. Portier, X. Labbe, C. Marie, P. Cardin, J. Boudin, S. Rueff, J.-M. Gourbilleau, F. |
| author_role | author |
| dc.creator.none.fl_str_mv | L., Khomenkova Merabet, H. Chauvat, M.-P. Frilay, C. Portier, X. Labbe, C. Marie, P. Cardin, J. Boudin, S. Rueff, J.-M. Gourbilleau, F. |
| dc.date.none.fl_str_mv | 2022-09-28 2024-03-05T08:08:02Z |
| dc.format.none.fl_str_mv | application/pdf |
| dc.identifier.none.fl_str_mv | http://dx.doi.org/10.1016/j.surfin.2022.102377 Khomenkova, L., Merabet, H., Chauvat, M. P., Frilay, C., Portier, X., Labbe, C., ... & Gourbilleau, F. (2022). Comprehensive investigation of Er2O3 thin films grown with different ALD approaches. Surfaces and Interfaces, 34, 102377. https://www.sciencedirect.com/science/article/pii/S2468023022006381 http://hdl.handle.net/10576/52675 34 2468-0230 |
| dc.language.none.fl_str_mv | en |
| dc.publisher.none.fl_str_mv | Elsevier |
| dc.rights.none.fl_str_mv | http://creativecommons.org/licenses/by/4.0/ info:eu-repo/semantics/openAccess |
| dc.subject.none.fl_str_mv | Er2O3 thin films Atomic layer deposition TEM XRD Luminescence Er silicate |
| dc.title.none.fl_str_mv | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| dc.type.none.fl_str_mv | Article info:eu-repo/semantics/publishedVersion info:eu-repo/semantics/article |
| description | The effect of Er precursor nature (Er(CpMe)3 or Er(tmhd)3) and annealing treatment at 500–1100 °C on the structural and optical properties of Er2O3 films grown on Si substrates by thermal or O2-plasma-assisted atomic layer deposition was studied by means of spectroscopic ellipsometry, Fourier-transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy coupled with energy dispersive X-ray spectroscopy as well as photoluminescence method. An annealing at 500–800 °C resulted in the film crystallization mainly. Thermal treatment at high temperatures caused the formation of Er silicate phase due to the diffusion of Si atoms from the substrate in the films depth. This phase was found to be Er2SiO5 being crystallized at 1100 °C. Light emitting properties of the films are determined by Er2O3 native defects (like oxygen vacancies) and intra-4f shell transition in Er3+ ions. The latter dominated in the films annealed at 1000–1100 °C. The most intense Er3+ emission, observed in the films grown with O2-plasma-assisted approach, was explained by a lower contribution of oxygen vacancies as well as by pronounced crystallization of Er silicate phase. In this latter, the effect of concentration quenching of Er3+ luminescence was lower due to a larger distance between Er3+ neighbor ions. |
| eu_rights_str_mv | openAccess |
| format | article |
| id | qu_f39df9729086fbb7b763aa1d63238527 |
| identifier_str_mv | Khomenkova, L., Merabet, H., Chauvat, M. P., Frilay, C., Portier, X., Labbe, C., ... & Gourbilleau, F. (2022). Comprehensive investigation of Er2O3 thin films grown with different ALD approaches. Surfaces and Interfaces, 34, 102377. 34 2468-0230 |
| language_invalid_str_mv | en |
| network_acronym_str | qu |
| network_name_str | Qatar University repository |
| oai_identifier_str | oai:qspace.qu.edu.qa:10576/52675 |
| publishDate | 2022 |
| publisher.none.fl_str_mv | Elsevier |
| repository.mail.fl_str_mv | |
| repository.name.fl_str_mv | |
| repository_id_str | |
| rights_invalid_str_mv | http://creativecommons.org/licenses/by/4.0/ |
| spelling | Comprehensive investigation of Er2O3 thin films grown with different ALD approachesL., KhomenkovaMerabet, H.Chauvat, M.-P.Frilay, C.Portier, X.Labbe, C.Marie, P.Cardin, J.Boudin, S.Rueff, J.-M.Gourbilleau, F.Er2O3 thin filmsAtomic layer depositionTEMXRDLuminescenceEr silicateThe effect of Er precursor nature (Er(CpMe)3 or Er(tmhd)3) and annealing treatment at 500–1100 °C on the structural and optical properties of Er2O3 films grown on Si substrates by thermal or O2-plasma-assisted atomic layer deposition was studied by means of spectroscopic ellipsometry, Fourier-transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy coupled with energy dispersive X-ray spectroscopy as well as photoluminescence method. An annealing at 500–800 °C resulted in the film crystallization mainly. Thermal treatment at high temperatures caused the formation of Er silicate phase due to the diffusion of Si atoms from the substrate in the films depth. This phase was found to be Er2SiO5 being crystallized at 1100 °C. Light emitting properties of the films are determined by Er2O3 native defects (like oxygen vacancies) and intra-4f shell transition in Er3+ ions. The latter dominated in the films annealed at 1000–1100 °C. The most intense Er3+ emission, observed in the films grown with O2-plasma-assisted approach, was explained by a lower contribution of oxygen vacancies as well as by pronounced crystallization of Er silicate phase. In this latter, the effect of concentration quenching of Er3+ luminescence was lower due to a larger distance between Er3+ neighbor ions.This work is funded by: - Qatar National Research Fund (QNRF) - grant No. 8-1467-1-268. - Agence Nationale de la Recherche (ANR) - grant No. ANR-11-EQPX-0020. - Centre National de la Recherche Scientifique (CNRS) - IRMA - FR 3095. - European Regional Development Fund (ERDF).Elsevier2024-03-05T08:08:02Z2022-09-28Articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://dx.doi.org/10.1016/j.surfin.2022.102377Khomenkova, L., Merabet, H., Chauvat, M. P., Frilay, C., Portier, X., Labbe, C., ... & Gourbilleau, F. (2022). Comprehensive investigation of Er2O3 thin films grown with different ALD approaches. Surfaces and Interfaces, 34, 102377.https://www.sciencedirect.com/science/article/pii/S2468023022006381http://hdl.handle.net/10576/52675342468-0230enhttp://creativecommons.org/licenses/by/4.0/info:eu-repo/semantics/openAccessoai:qspace.qu.edu.qa:10576/526752024-12-01T09:46:38Z |
| spellingShingle | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches L., Khomenkova Er2O3 thin films Atomic layer deposition TEM XRD Luminescence Er silicate |
| status_str | publishedVersion |
| title | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| title_full | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| title_fullStr | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| title_full_unstemmed | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| title_short | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| title_sort | Comprehensive investigation of Er2O3 thin films grown with different ALD approaches |
| topic | Er2O3 thin films Atomic layer deposition TEM XRD Luminescence Er silicate |
| url | http://dx.doi.org/10.1016/j.surfin.2022.102377 https://www.sciencedirect.com/science/article/pii/S2468023022006381 http://hdl.handle.net/10576/52675 |