Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

Comprehensive investigation of Er2O3 thin films grown with different ALD approaches

The effect of Er precursor nature (Er(CpMe)3 or Er(tmhd)3) and annealing treatment at 500–1100 °C on the structural and optical properties of Er2O3 films grown on Si substrates by thermal or O2-plasma-assisted atomic layer deposition was studied by means of spectroscopic ellipsometry, Fourier-transf...

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Bibliographic Details
Main Author: L., Khomenkova (author)
Other Authors: Merabet, H. (author), Chauvat, M.-P. (author), Frilay, C. (author), Portier, X. (author), Labbe, C. (author), Marie, P. (author), Cardin, J. (author), Boudin, S. (author), Rueff, J.-M. (author), Gourbilleau, F. (author)
Format: article
Published: 2022
Subjects:
Er2O3 thin films
Atomic layer deposition
TEM
XRD
Luminescence
Er silicate
Online Access:http://dx.doi.org/10.1016/j.surfin.2022.102377
https://www.sciencedirect.com/science/article/pii/S2468023022006381
http://hdl.handle.net/10576/52675
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http://dx.doi.org/10.1016/j.surfin.2022.102377
https://www.sciencedirect.com/science/article/pii/S2468023022006381
http://hdl.handle.net/10576/52675

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